Kamaram Munira

Kamaram Munira

Patent Engineer

Location:
Half Moon Bay Office
Phone:
800-419-4712
Fax:
650-712-0263
Email:

Kamaram is a Patent Engineer at Haynes, Beffel & Wolfeld. Recognized in the Electrical Engineering field for strong and multi-dimensional technical and research skills, Kamaram applies her expertise and experience to innovate and customize legal and business solutions for the firm's clients.­­

Kamaram has an extensive understanding of physics-based modeling and the simulation of next-generation semiconductor and magnetic devices, as well as novel material investigation using Density Functional Theory. Furthermore, she possesses a strong understanding of Semiconductor Device Physics and Materials Science. Kamaram's sharp attention to detail and ability to quickly learn new processes continuously aids her in applying engineering concepts, principles and practices to device design and engineering.

Kamaram received a B.S. in Computer Science with high honors and a certificate in Nanomaterials from the Georgia Institute of Technology in 2006. She received a Ph.D. in Electrical Engineering from the University of Virginia in 2012, completing her dissertation on "Achieving Low Energy and Reliable Performance in Magnetic Memory and Logic." Kamaram was honored with the Louis T. Rader Graduate Research Award from the University of Virginia, and the President's Undergraduate Research Award from the Georgia Institute of Technology.

Kamaram also served as a postdoctoral research fellow at the Center for Materials for Information Technology at University of Alabama, where she investigated highly polarized full, half and inverse Heusler alloys to identify materials to be used as free layers in STT-MRAM to improve the efficiency of switching (heusleralloys.mint.ua.edu). Furthermore, she analyzed layered Heusler superlattices, Heusler alloy and MgO interface for half-metallicity and perpendicular anisotropy. She also was involved in identifying incoherent switching modes in the free layer in STT-MRAM cells, as well as evaluated potential trapped states along each mode during the writing process.

In addition, Kamaram served as a postdoctoral fellow at Micron Technology, Inc., where she created physics-based compact models for emerging memory technologies and next generation DRAM in MATLAB and Verilog, simulating devices and analyzing results to build a more realistic model for engineers. She also tested the reliability of voltage controlled anisotropy-magnetic RAMs (VCMA-MRAM), investigating alternative writing mechanisms to spin transfer torque in magnetic RAM (MRAM).

Karmaram is a member of the American Physical Society and the Institute of Electrical and Electronics Engineers. In her spare time, Kamaram volunteers as a mentor for the American Physical Society's Industry Mentoring for Physicists (IMPact) program.

Kamaram's published works include:

  • K. Munira, Sumeet C. Pandey, Witold Kula and Gurtej Sandhu, "Voltage-Controlled Magnetization Switching in MRAMs in Conjunction with Spin-transfer Torque and Applied Magnetic Field," accepted by the Journal of Applied Physics, 2016
  • J.G. Azadani, K. Munira, J. Romero, J. Ma, C. Sivakumar, A.W. Ghosh and W. H. Butler, "Anisotropy in Layered Heusler Alloy Superlattices," Journal of Applied Physics, Vol. 119, Issue 4, Page 043904, 2015
  • K. Munira and P. Visscher, "Calculation of Energy-barrier Lowering by Incoherent Switching in STT-MRAM," Journal of Applied Physics, Vol. 117, Issue 17, Page 17B710, 2015
  • K. Munira, W.A. Soffa, A.W. Ghosh, "Material Issues for Efficient Spin-Transfer Torque RAMs," Nanoelectronic Device Applications, Editors: J. Morris and K. Iniewski, Publisher: CRC Press, 2013